Study on the State Support Model of Key Core Technology Research and Development ——Taking Korean Semiconductor 4M DRAM Joint R&D Project as an Example
Peng Xiaoyi1, Zhou Cheng1, Zhang Chidong2
1. Department of Philosophy and Religious Studies,Peking University,Beijing 100871,China;
2. Institute of Science and Development,Chinese Academy of Sciences,Beijing 100190,China
Abstract：The key core technology research and development in the semiconductor field has typical characteristics of state support.The relevant experiences from Japan and the United States have received widespread attention,while the Korean experience has been neglected.As one of the Chip4 alliance members,South Korea's innovation and development in semiconductor technology originated from the joint research and development project of 4M DRAM implemented in 1986.Based on a large amount of Korean-language materials,this paper conducts an in-depth analysis of the policy process of South Korea's semiconductor 4M DRAM technology research and development,including its initiation,goal setting and task decomposition,process organization and management,as well as its achievements and experiences.It concludes that the key core technology research and development organization model in South Korea is characterized by“parallel state-led and enterprise-led”approaches,with national research institutes as the coordinating units,supporting multiple enterprises through large-scale scientific and technological projects for joint research and development.On the basis of analyzing its achievements and reasons,further policy implications are proposed for China to improve its new national system for key core technology research and development under the conditions of a sound socialist market economy.
彭晓艺, 周程, 张赤东. 关键核心技术攻关的国家支持模式——以韩国半导体4M DRAM联合研发项目为例[J]. 中国科技论坛, 2024(5): 178-188.
Peng Xiaoyi, Zhou Cheng, Zhang Chidong. Study on the State Support Model of Key Core Technology Research and Development ——Taking Korean Semiconductor 4M DRAM Joint R&D Project as an Example. , 2024(5): 178-188.
2024, 
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